B. Jayant Baliga

B. Jayant Baliga

Global Energy Prize laureate

Progress Energy, Distinguished University Professor, North Carolina State University, U.S.A

Title: Enabling Green and Renewable Energy Solutions with Power Semiconductor Technology Links

Dr. Baliga is internationally recognized for his leadership in the area of power semiconductor devices for over 40 years. He received his B.Tech. degree from I.I.T-Madras in 1969, and his M.S. and Ph.D. degrees from R.P.I in 1971 and 1974. He invented, developed and commercialized the Insulated Gate Bipolar transistor (IGBT) device while working for G.E. from 1974-1988. He has been on the NCSU faculty since 1988. Dr. Baliga has authored 22 books, 650 papers, and acquired 121 U.S. patents. His highest honors include: the National Medal of Technology and Innovation from President Obama in 2011; the IEEE Medal of Honor in 2014; the Global Energy Prize in 2016; and induction into the National Inventors Hall of Fame in 2016 as the sole inventor of the IGBT. He is currently working on commercialization of silicon carbide power devices, an area he pioneered 40 years ago.